Products
Submitted by drupaladmin on Sat, 2008-03-01 00:26.
PBN Crucibles for VGF
Available from 2" in diameter to 6" in diameter
Height from 7" to 10"
PBN Crucibles for LEC
Available from 3" in diameter to 8" in diameter
Submitted by drupaladmin on Sat, 2008-03-01 00:25.
Semi-conducting Ge Specifications
| Growth Method |
VGF |
| Dopant |
n-type: As; p-type: Ga |
| Wafer Shape |
Round (DIA: 2" TO 6") |
| Surface Orientation** |
(100)±0.5° |
**Other Orientations maybe available upon request
Submitted by drupaladmin on Sat, 2008-03-01 00:22.
| Purity Levels |
| 4N |
6N |
7N |
MBE Grade - 8N |
| 99.99% |
99.9999% |
99.99999% |
99.999999% Plus |
| Total Impurities |
| <50ppm |
<500ppb |
<50ppb |
<10ppb |
| Critical Elements |
| Cu |
<10ppm |
<0.5ppb |
<0.5ppb |
<0.5ppb |
| Zn |
<5ppm |
<3.0ppb |
<1.0ppb |
<1.0ppb |
| Cd |
<5ppm |
<0.5ppb |
<0.5ppb |
<0.5ppb |
| Si |
<2ppm |
<1.0ppb |
<0.5ppb |
<0.5ppb |
| Fe |
<5ppm |
<0.1ppb |
<0.1ppb |
<0.1ppb |
| Al |
<5ppm |
<0.2ppb |
<0.2ppb |
<0.2ppb |
| Ca |
<5ppm |
<5ppb |
<5.0ppb |
<5.0ppb |
| Na |
<5ppm |
<0.2ppb |
<0.2ppb |
<0.2ppb |
| Pb |
<10ppm |
<0.5ppb |
<0.5ppb |
<0.5ppb |
| In |
<10ppm |
<1.0ppb |
<0.5ppb |
<0.5ppb |
Analysis Method: Glow Discharge Mass Spectroscopy (GDMS)
Submitted by drupaladmin on Sat, 2008-03-01 00:20.
Semi-Insulating GaAs Specifications
| Growth Method |
VGF |
| Dopant |
Carbon |
| Wafer Shape* |
Round (DIA: 2", 3", 4", and 6") |
| Surface Orientation** |
(100)±0.5° |
*5" Wafers available upon request
Submitted by drupaladmin on Sat, 2008-03-01 00:16.
Semi-conducting GaAs Specifications
| Growth Method |
VGF |
| Dopant |
Si (n-type) AND Zn (p-type) |
| Wafer Shape |
Round (DIA: 2", 3", 4" and 6") |
| Surface Orientation* |
(100)±0.5° |
*Other Orientations maybe available upon request
Submitted by drupaladmin on Sat, 2008-03-01 00:11.
Semi-conducting InP Specifications
| Growth Method |
VGF |
| Dopant |
n-type: S, Sn AND Undoped; p-type: Zn |
| Wafer Shape |
Round (DIA: 2", 3", AND 4") |
| Surface Orientation |
(100)±0.5° |
*Other Orientations maybe available upon request
Submitted by drupaladmin on Fri, 2008-02-29 20:10.
Semi-Insulating InP Specifications
| Growth Method |
VGF |
| Dopant |
Iron (FE) |
| Wafer Shape |
Round (DIA: 2", 3", AND 4") |
| Surface Orientation |
(100)±0.5° |
*Other Orientations maybe available upon request
Submitted by drupaladmin on Fri, 2008-02-15 18:56.
| Ge Substrates |
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Submitted by drupaladmin on Thu, 2006-02-09 22:05.
Thank you for inquiring about our products. Expect to hear from us soon!
Submitted by drupaladmin on Thu, 2006-02-09 02:47.
After manufacturing, we individually inspect all substrates, measuring their flatness, bow and taper, and checking them for surface saw marks, edge chips and cracks. We then package them in a class 100 environment and ship them to customers in inert-atmosphere individually-sealed containers to secure the substrate quality at delivery.
In order to satisfy customers' just-in-time delivery requirements, we generally keep a consignment supply of as-sliced substrates in inventory for our standard product lines. In most cases, our customers can expect a quick turnaround in 2 to 4 weeks.
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